Multi-excitons in self-assembled InAs/GaAs quantum dots: A pseudopotential, many-body approach

We use a many-body, atomistic empirical pseudopotential approach to predict the multi-exciton emission spectrum of a lens shaped InAs/GaAs self-assembled quantum dot. We discuss the effects of (i) The direct Coulomb energies, including the differences of electron and hole wavefunctions, (ii) the exchange Coulomb energies and (iii) correlation energies given by a configuration interaction calculation. Emission from the groundstate of the $N$ exciton system to the $N-1$ exciton system involving $e_0\to h_0$ and $e_1\to h_1$ recombinations are discussed. A comparison with a simpler single-band, effective mass approach is presented

Entanglement transfer from electron spins to photons in spin light-emitting diodes containing quantum dots

We show that electron recombination using positively charged excitons in single quantum dots provides an efficient method to transfer entanglement from electron spins onto photon polarizations. We propose a scheme for the production of entangled four-photon states of GHZ type. From the GHZ state, two fully entangled photons can be obtained by a measurement of two photons in the linear polarization basis, even for quantum dots with observable fine structure splitting for neutral excitons and significant exciton spin decoherence. Because of the interplay of quantum mechanical selection rules and interference, maximally entangled electron pairs are converted into maximally entangled photon pairs with unity fidelity for a continuous set of observation directions. We describe the dynamics of the conversion process using a master-equation approach and show that the implementation of our scheme is feasible with current experimental techniques.Comment: 5 pages, 2 figures. v2: Extended scheme, revised version. v3: Minor additions and extended title, published versio

Decoherence of localized spins interacting via RKKY interaction

We theoretically study decoherence of two localized spins interacting via the RKKY interaction in one-, two-, and three-dimensional electron gas. We derive the kinetic equation for the reduced density matrix of the localized spins and show that energy relaxation caused by singlet-triplet transition is suppressed when the RKKY interaction is ferromagnetic. We also estimate the decoherence time of the system consisting of two quantum dots embedded in a two dimensional electron gas.Comment: 4pages, 2figure

Phonon-induced exciton dephasing in quantum dot molecules

A new microscopic approach to the optical transitions in quantum dots and quantum dot molecules, which accounts for both diagonal and nondiagonal exciton-phonon interaction, is developed. The cumulant expansion of the linear polarization is generalized to a multilevel system and is applied to calculation of the full time dependence of the polarization and the absorption spectrum. In particular, the broadening of zero-phonon lines is evaluated directly and discussed in terms of real and virtual phonon-assisted transitions. The influence of Coulomb interaction, tunneling, and structural asymmetry on the exciton dephasing in quantum dot molecules is analyzed

Phonon-induced dephasing of localized optical excitations

The dynamics of strongly localized optical excitations in semiconductors is studied including electron-phonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches

Effect of quantum confinement on exciton-phonon interactions

We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional (Q2D) and quasi-zero-dimensional localizations. The temperature dependence of the homogeneous linewidth is obtained with high precision from micro-photoluminescence spectra. We confirm the reduced interaction of the excitons with their environment with decreasing dimensionality except for the coupling to LO-phonons. The low-temperature limit for the linewidth of these localized excitons is five times smaller than that of Q2D excitons. The coefficient of exciton-acoustic-phonon interaction is 5 ~ 6 times smaller than that of Q2D excitons. An enhancement of the average exciton-LO-phonon interaction by localization is found in our sample. But this interaction is very sensitive to the detailed structure of the localizing centers.Comment: 6 pages, 4 figure

Decoherence processes during active manipulation of excitonic qubits in semiconductor quantum dots

Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during active manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4 ps and 10 ps. Up to 5 periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the non-resonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.Comment: 18 pages, 4 figure

Temperature dependence of polarization relaxation in semiconductor quantum dots

The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge carriers and LO phonons. The phonon bottleneck does not prevent significantly the relaxation processes and the calculated decay times can be of the order of a few tens picoseconds at temperature $T \simeq 100$K, consistent with recent experiments by Paillard et al. [Phys. Rev. Lett. {\bf86}, 1634 (2001)].Comment: 4 pages, 4 figure

Drastic effects of damping mechanisms on the third-order optical nonlinearity

We have investigated the optical response of superradiant atoms, which undergoes three different damping mechanisms: radiative dissipation ($\gamma_r$), dephasing ($\gamma_d$), and nonradiative dissipation ($\gamma_n$). Whereas the roles of $\gamma_d$ and $\gamma_n$ are equivalent in the linear susceptibility, the third-order nonlinear susceptibility drastically depends on the ratio of $\gamma_d$ and $\gamma_n$: When $\gamma_d \ll \gamma_n$, the third-order susceptibility is essentially that of a single atom. Contrarily, in the opposite case of $\gamma_d \gg \gamma_n$, the third-order susceptibility suffers the size-enhancement effect and becomes proportional to the system size.Comment: 5pages, 2figure